| Application Number: | 200610025284.5 | Application date: | 2006.03.30 |
| name: | Method for manufacturing strained silicon on insulator by phase change method | ||
| Public (announcement) number: | CN1851900 | Public (announcement) day: | 2006.10.25 |
| Main classification number: | H01L21/762(2006.01)I | The original application number of the division: | |
| Classification number: | H01L21/762(2006.01)I; H01L21/84(2006.01)I; H01L21/20(2006.01)I | ||
| Award day: | priority: | ||
| Application (patent) person: | Shanghai University of Technology | ||
| address: | No. 516, Jungong Road, Yangpu District, Shanghai 200093, China | ||
| Invention (design) person: | Zhang Xuanxiong; Ru Guoping | International application: | |
| International announcement: | Enter country date: | ||
| Patent agency: | Shanghai Shenhui Patent Agency Co., Ltd. | agent: | Wu Baogen |
The invention discloses a method for fabricating strained silicon on insulator by phase change method, which adopts dense and smooth amorphous silicon deposition technology, low temperature bonding technology, irreversible phase change control of amorphous silicon to microcrystalline silicon, and microcrystals. The ingenious combination of silicon internal oxidation technology avoids the expensive silicon germanium epitaxy and chemical mechanical polishing process in the preparation of existing SSOI materials, and does not require the subsequent CMOS process modification after SGOI material fabrication, etc., to achieve a new The production of SSOI materials, while achieving the production cost goal of reducing SSOI.
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