| Application Number: | 95207923.2 | Application date: | 1995.04.17 |
| name: | Novel structure of glass substrate interconnected low-light amorphous silicon battery | ||
| Public (announcement) number: | CN2274375 | Public (announcement) day: | 1998.02.11 |
| Main classification number: | H01L31/105 | The original application number of the division: | |
| Classification number: | H01L31/105; H01L31/02 | ||
| Award day: | 1997.12.05 | priority: | |
| Application (patent) person: | Nankai University | ||
| address: | No. 94, Weijin Road, Tianjin 300071 | ||
| Invention (design) person: | Sun Zhonglin; Xu Wenyuan; Yan Xinhua | International application: | |
| International announcement: | Enter country date: | ||
| Patent agency: | Nankai University Patent Office | agent: | Xie Songfan; Hu Anpeng |
The utility model is a novel structure of a glass substrate interconnected low-light amorphous silicon battery, belonging to an amorphous silicon material photovoltaic device. In the prior art, when plasma glow discharge is used to prepare amorphous silicon photovoltaic devices, there are two problems: first, the presence of transparent conductive electrodes (ITO) in the device makes the photocurrent transmission characteristics poor, and second, there are many internal devices. Interface state, resulting in loss of photocurrent. The utility model adopts: 1. A high-transport T-layer film 2 is prepared between the transparent conductive electrode (ITO) and the P layer, a gradient layer is prepared between the P layer and the I layer of the device, and a post-H+ process is performed to increase the current and increase the voltage. Improves battery performance and expands battery life.
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